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| FMA3018QFN MEDIUM LINEARITY INTEGRATED BALANCED AMPLIFIER MODULE FEATURES (1.7-2.0GHZ): * * * * * * * * * * Preliminary Datasheet v2.1 BOARD PHOTOGRAPH: * Balanced low noise amplifier module No external couplers required Excellent 40 dBm Output IP3 25 dBm Output Power (P1dB) Excellent Return Loss (RL): -25dB 14.5 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 5 V supply (240mA current) Cost effective footprint: 4mm x 4mm QFN 6 mm x 6mm evaluation board available RoHS compliant: (Directive 2002/95/EC) GENERAL DESCRIPTION: The BA1500QFN MMIC module is a selfbiased, integrated and packaged balanced amplifier mounted onto 6x6mm2 FR4 board. The active device is a pair of pseudomorphic High Electron Mobility Transistors (pHEMT) specifically optimised for balanced configuration systems. The Filtronic 0.25m process ensures class-leading noise performance. The use of a small footprint plastic package allows for a cost effective total system implementation. TYPICAL APPLICATIONS: * * Wireless infrastructure: Tower mounted Amplifiers and front end LNAs for EGSM/PCS/WCDMA/UMTS base stations High intercept-point LNAs ELECTRICAL SPECIFICATIONS: PARAMETER Frequency Minimum Noise Figure Input Third-Order Intercept Point SYMBOL Freq NF IIP3 CONDITIONS VDS = 5.0 V; IDS = 240mA VDS = 5.0 V; IDS = 240mA VDS = 5.0 V; IDS = 240mA MIN 1.7 1.2 24 TYP 1.85 1.3 25.5 MAX 2 1.6 26.5 UNITS GHz dB dBm Small-Signal Gain Small-Signal Input Return Loss Small-Signal Output Return Loss Power at 1dB Gain Compression SSG S11 S22 P1dB VDS = 5.0 V; IDS = 240mA VDS = 5.0 V; IDS = 240mA VDS = 5.0 V; IDS = 240mA VDS = 5.0 V; IDS = 240mA 14 -25 -25 24.5 14.5 -23 -23 25 15.5 -20 -22 25.5 dB dB dB dBm Note: TAMBIENT = 22C 1 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA3018QFN Preliminary Datasheet v2.1 ABSOLUTE MAXIMUM RATING : PARAMETER Drain-Source Voltage Channel Operating Temperature Storage Temperature 1 SYMBOL VDS TCH TSTG TEST CONDITIONS 5 Under any acceptable bias state Non-Operating Storage ABSOLUTE MAXIMUM 8V 175C -55C to 150C Notes: 1. TAmbient = 22C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device Information on the mounting of QFN style packages for optimum thermal performance is available on request. 2. BIASING GUIDELINE: * The BA1500QFN module is a self-biased circuit, which employ an RF-bypassed source resistor to provide the negative Gate-Source bias voltage, and such circuits provide some temperature stabilization for the device TYPICAL MEASURED PERFORMANCE ON EVALUATION BOARD: S21 (dB) 20 15 10 5 0 0.5 1 1.5 2 2.5 Frequency (GHz) 3 0 -10 -20 -30 -40 0.5 S11 S22 Return Loss (dB) 1 1.5 2 2.5 Frequency (GHz) 3 NF (dB) 3 2.5 2 1.5 1 1.6 1.7 1.8 1.9 2 Frequency (GHz) 2.1 28 27 26 25 24 23 1.7 IIP3 LO (dBm) 1.8 1.9 Frequency (GHz) 2 Note: NF can be centred by optimising printed inductive elements 2 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA3018QFN Preliminary Datasheet v2.1 REFERENCE DESIGN (1.7-2GHZ): COMPONENT QFN Eval board material (1.7-2)GHZ 4x4 QFN package 6x6 mm RF4 Board (0.8 mm thick 1/2 Ounce Cu on both sides and printed inductors) EVALUATION BOARD LAYOUT (DRAWINGS AVAILABLE ON REQUEST): VD1 4x4QFN package SMA connector RFin RFout SMA connector VD2 SIMPLIFIED MODULE SCHEMATIC: 2 FSS25_SSpHEMT 1 SUBCKT ID=Coupler 3 2 1 PORT P=1 INDQ INDQ 3 RES CAP 3 2 2 SUBCKT ID=Coupler 1 PORT P=2 1 INDQ FSS25_SSpHEMT 3 INDQ RES CAP 3 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA3018QFN Preliminary Datasheet v2.1 PACKAGE OUTLINE: (Dimensions in millimetres - mm) Pin identifier 0.4 40.05 0.5 SLP 24L 4X4 2.75 Bottom View 40.05 Top View 0.9 0.5 side View PREFERRED ASSEMBLY INSTRUCTIONS: Please contact Filtronic Compound Semiconductors Ltd for further details. APPLICATION NOTES & DESIGN DATA: Application Notes and design data including Sparameters are available; please contact Filtronic Compound Semiconductors Ltd. HANDLING PRECAUTIONS: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No. 22-A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. DISCLAIMERS: This product is not designed for use in any space based or life sustaining/supporting equipment. ORDERING INFORMATION: PART NUMBER FMA3018QFN-EB DESCRIPTION Packaged Balanced MMIC LNA Evaluation Board 4 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com |
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